NTH027N65S3F Datasheet - ON Semiconductor

N-Channel MOSFET

NTH027N65S3F Features

* 700 V @ TJ = 150°C

* Typ. RDS(on) = 23 mW

* Ultra Low Gate Charge (Typ. Qg = 259 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 1972 pF)

* 100% Avalanche Tested

* These Devices are Pb

* Free and are RoHS Compliant Applications

NTH027N65S3F General Description

SUPERFET III MOSFET is onsemi’s brand *new high voltage super *junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on *resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide .

NTH027N65S3F Datasheet (429.76 KB)