Part number:
NTH4302
Manufacturer:
File Size:
56.75 KB
Description:
Hd3e quad n-channel
NTH4302
56.75 KB
Hd3e quad n-channel
* Ultra Low RDS(on) Provides Higher Efficiency
* Very Fast Switching due to Planar Technology and Leadless Package
* 200% Footprint Reduction Compared to Similar DPAK Solution for the Same Power
* Up to 80 Amp per FET
* Very Low Vf (0.8 mV) Ideal for Synchrono
📁 Related Datasheet
NTH4L013N120M3S - SiC MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET – EliteSiC, 13 mohm, 1200 V, M3S, TO-247-4L
NTH4L013N120M3S
Features
• Typ. RDS(on) = 13 mW @ .
NTH4L014N120M3P - SiC MOSFET
(ON Semiconductor)
Silicon Carbide (SiC) MOSFET – EliteSiC, 14 mohm, 1200 V, M3P, TO-247-4L
NTH4L014N120M3P
Features
• Typ. RDS(on) = 14 mW @ VGS = 18 V • Low Switching.
NTH4L015N065SC1 - SiC MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET – EliteSiC, 12 mohm, 650 V, M2, TO-247-4L
NTH4L015N065SC1
Features
• Typ. RDS(on) = 12 mW @ .
NTH4L020N090SC1 - SiC MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 900 V, M2, TO-247-4L
V(BR)DSS 900 V
RDS(ON) MAX 28 mW @ 15 V
ID MAX 11.
NTH4L020N120SC1 - SiC MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L
NTH4L020N120SC1
Features
• Typ. RDS(on) = 20 mW •.
NTH4L022N120M3S - SiC MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L
V(BR)DSS 1200 V
RDS(ON) MAX 30 mW @ 18 V
D
ID M.
