• Part: NTHS5443
  • Description: P-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: onsemi
  • Size: 119.38 KB
Download NTHS5443 Datasheet PDF
onsemi
NTHS5443
Features - Low RDS(on) for Higher Efficiency - Logic Level Gate Drive - Miniature Chip FET Surface Mount Package Saves Board Space - Pb- Free Package is Available Applications - Power Management in Portable and Battery- Powered Products; i.e., Cellular and Cordless Telephones and PCMCIA Cards MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Steady Symbol 5 secs State Unit Drain- Source Voltage Gate- Source Voltage Continuous Drain Current (TJ = 150°C) (Note 1) TA = 25°C TA = 85°C Pulsed Drain Current Continuous Source Current (Note 1) Maximum Power Dissipation (Note 1) TA = 25°C TA = 85°C Operating Junction and Storage Temperature Range VDS VGS ID IDM IS PD TJ, Tstg - 20 "12 - 4.9 - 3.6 - 3.5 - 2.6 "15 - 4.9 - 3.6 2.5 1.3 1.3 0.7 - 55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these...