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NTHS5441
MOSFET – Power, P-Channel, ChipFET
-20 V, -5.3 A
Features
• Low RDS(on) • Higher Efficiency Extending Battery Life • Logic Level Gate Drive • Miniature ChipFET Surface Mount Package • Pb−Free Package is Available
Applications
• Power Management in Portable and Battery−Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
http://onsemi.com
V(BR)DSS −20 V
RDS(on) TYP 46 mW @ −4.5 V
ID MAX −5.3 A
S
G
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Steady 5 sec State
Unit
Drain−Source Voltage
Gate−Source Voltage
Continuous Drain Current (TJ = 150°C) (Note 1) TA = 25°C TA = 85°C
Pulsed Drain Current
Continuous Source Current (Note 1)
VDS −20 V VGS "12 V ID A
−5.3 −3.9 −3.8 −2.8
IDM "20 A
IS
−5.3 −3.
NTHS5441 Datasheet
