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NTHS5443
MOSFET – Power, P-Channel, ChipFET
-20 V, -4.9 A
Features
• Low RDS(on) for Higher Efficiency • Logic Level Gate Drive • Miniature ChipFET Surface Mount Package Saves Board Space • Pb−Free Package is Available
Applications
• Power Management in Portable and Battery−Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Steady Symbol 5 secs State
Unit
Drain−Source Voltage
Gate−Source Voltage
Continuous Drain Current (TJ = 150°C) (Note 1) TA = 25°C TA = 85°C
Pulsed Drain Current
Continuous Source Current (Note 1)
Maximum Power Dissipation (Note 1) TA = 25°C TA = 85°C
Operating Junction and Storage Temperature Range
VDS VGS ID
IDM IS PD
TJ, Tstg
−20 "12
−4.9 −3.6 −3.5 −2.6
"15 −4.9 −3.6
2.5 1.3 1.
NTHS5443 Datasheet
