NTJD2152P - Trench Small Signal MOSFET

ON Semiconductor

Datasheet Details

http://onsemi. com V(BR)DSS RDS(on) TYP 0.22 W @.
4.5 V.
8 V 0.32 W @.
2.5 V 0.51 W @.
1.8 V.
0.775 A ID Max.
Leading.
8 V Trench for Low RDS(ON) Performance ESD Protected Gate Small Footprint (2 x 2 mm) Same Package as SC.
70.
6 Pb.
Free Packages are Available Load Power switching DC.
DC Conversion Li.
Ion Battery Charging C.

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Published: Apr 21, 2007 |