Part number:
NTJD4001N
Manufacturer:
File Size:
194.39 KB
Description:
Dual n-channel mosfet.
NTJD4001N Datasheet (194.39 KB)
* Low Gate Charge for Fast Switching
* Small Footprint
* 30% Smaller than TSOP
* 6
* ESD Protected Gate
* AEC Q101 Qualified
* NVTJD4001N
* These Devices are Pb
* Free and are RoHS Compliant Applications
* Low Side Load Swit
NTJD4001N Datasheet (194.39 KB)
NTJD4001N
194.39 KB
Dual n-channel mosfet.
📁 Related Datasheet
NTJD4105C - Small Signal MOSFET
(ON Semiconductor)
..
NTJD4105C Small Signal MOSFET
20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC−88
Features
• • • • •
Complementary N and P .
NTJD4152P - Dual P-Channel MOSFET
(ON Semiconductor)
NTJD4152P, NVJD4152P
MOSFET – Dual, P-Channel, Trench Small Signal, ESD Protected, SC-88
20 V, 0.88 A
Features
• Leading Trench Technology for Low RD.
NTJD4158C - Small Signal MOSFET
(ON Semiconductor)
NTJD4158C, NVJD4158C
MOSFET – Small Signal, Complementary, SC-88
30 V/-20 V, +0.25/-0.88 A
Features
• Leading 20 V Trench for Low RDS(on) Performanc.
NTJD4401N - Small Signal MOSFET
(ON Semiconductor)
NTJD4401N Small Signal MOSFET
20 V, Dual N−Channel, SC−88 ESD Protection
Features
• • • • • • • • •
Small Footprint (2 x 2 mm) Low Gate Charge N−Cha.
NTJD1155L - P-Channel Power MOSFET
(ON Semiconductor)
NTJD1155L
MOSFET – Power, P-Channel, High Side Load Switch with Level-Shift, SC-88
8 V, +1.3 A
The NTJD1155L integrates a P and N−Channel MOSFET in a.
NTJD2152P - Trench Small Signal MOSFET
(ON Semiconductor)
NTJD2152P Trench Small Signal MOSFET
8 V, Dual P−Channel, SC−88 ESD Protection
Features http://onsemi.
V(BR)DSS RDS(on) TYP 0.22 W @ −4.5 V −8 V 0..
NTJD5121N - Power MOSFET
(ON Semiconductor)
MOSFET – Power, Dual, N-Channel With ESD Protection, SC-88
60 V, 295 mA
NTJD5121N, NVJD5121N
Features
• Low RDS(on) • Low Gate Threshold • Low Input C.
NTJS3151P - Trench Power MOSFET
(ON Semiconductor)
NTJS3151P, NVJS3151P
MOSFET – Power, Single, P-Channel, Trench, ESD Protected, SC-88
12 V, 3.3 A
Features
• Leading Trench Technology for Low RDS(ON).
