NTJS4151P Datasheet - ON Semiconductor

NTJS4151P, P-Channel Power MOSFET

DATA SHEET www.onsemi.com MOSFET * Power, Single, P-Channel, Trench, SC-88 -20 V, -4.2 A NTJS4151P V(BR)DSS *20 V RDS(on) Typ 47 mW

Features

* Leading Trench Technology for Low RDS(ON) Extending Battery Life
* SC
* 88 Small Outline (2x2 mm) for Maximum Circuit Board Utilization, Same as SC
* 70
* 6
* Gate Diodes for ESD Protection
* Pb

Applications

* High Side Load Switch
* Cell Phones, Computing, Digital Cameras, MP3s and PDAs MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain
* to
* Source Voltage VDSS
* 20 V Gate
* to
* Source Voltage VGS ±12 V Con

NTJS4151P_ONSemiconductor.pdf