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NTLJF1103P Power MOSFET and Schottky Diode

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Description

NTLJF1103P Product Preview Power MOSFET and Schottky Diode *8 V, *4.3 A, mCool] P *Channel, with 2.0 A Schottky Barrier Diode.

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Features

* WDFN 2x2 mm Package with Exposed Drain Pad for Excellent Thermal Conduction
* Footprint Same as SC
* 88 Package
* 1.5 V VGS Rated RDS(on)
* Low VF, 2 A Schottky Diode
* Low Profile (< 0.8 mm) for Easy Fit in Thin Environment
* This is a Pb

Applications

* DC
* DC Buck Converter
* Low Voltage Hard Disk DC Power Source MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage Gate
* to
* Source Voltage Continuous Drain Current (Note 1) Power Diss

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