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NTLJF3118N Power MOSFET and Schottky Diode

NTLJF3118N Description

NTLJF3118N Power MOSFET and Schottky Diode 20 V, 4.6 A, N *Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package .

NTLJF3118N Features

* WDFN 2x2 mm Package Provides Exposed Drain Pad for Excellent Thermal Conduction
* Footprint Same as SC
* 88 Package
* 1.8 V VGS Rated RDS(on)
* Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
* Low VF 2 A Schottky Diode
* This is a Pb

NTLJF3118N Applications

* DC
* DC Boost/Buck Converter
* Low Voltage Hard Disk DC Power Source MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage VDSS 20 V Gate
* to
* Source Voltage VGS ±12 V Continuous Drain C

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Power MOSFET and Schottky Diode ON Semiconductor
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