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NTP13N10 Power MOSFET

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Description

NTP13N10 Preferred Device Power MOSFET 13 A, 100 V, N *Channel Enhancement *Mode TO *220 .

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Features

* Source
* to
* Drain Diode Recovery Time Comparable to a Discrete
* Fast Recovery Diode Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated Temperature Pb
* Free Package is Available VDSS 100 V http://onsemi. com RDS(ON) TYP 165 m

Applications

* PWM Motor Controls
* Power Supplies
* Converters MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain
* to
* Source Voltage Drain
* to
* Source Voltage (RGS = 1.0 MΩ) Gate
* to
* Source Voltage
* Continuous
* N

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