NUS5530MN Integrated Power MOSFET

ON Semiconductor

Description

NUS5530MN Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor This integrated device represents a new level of safety and board

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Datasheet Specifications

Part number: NUS5530MN
Manufacturer: ON Semiconductor ↗
File Size: 223.93 KB
Datasheet: NUS5530MN_ONSemiconductor.pdf
Description: Integrated Power MOSFET

Features

* Low RDS(on) (MOSFET) and Low VCE(sat) (Transistor)
* Higher Efficiency Extending Battery Life
* Logic Level Gate Drive (MOSFET)
* Performance DFN Package
* This is a Pb

Applications

* Power Management in Portable and Battery
* Powered Products; i. e. , Cellular and Cordless Telephones and PCMCIA Cards MAXIMUM RATINGS FOR P
* CHANNEL FET (TA = 25°C unless otherwise noted) Rating Steady Symbol 5 sec State Unit Drain
* Source Voltage Gate
* Source

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