NVB095N65S3F Key Features
- 700 V @ TJ = 150°C
- Typ. RDS(on) = 78 mW
- Ultra Low Gate Charge (Typ. Qg = 65 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 597 pF)
- 100% Avalanche Tested
- AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free, Halogen-Free/BFR-Free and are RoHS