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NVB5860N N-Channel Power MOSFET

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Description

NTB5860N, NTP5860N, NVB5860N N-Channel Power MOSFET 60 V, 220 A, 3.0 mW .

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Features

* Low RDS(on)
* High Current Capability
* 100% Avalanche Tested
* These Devices are Pb
* Free, Halogen Free and are RoHS Compliant

Applications

* Requiring Unique Site and Control Change Requirements; AEC
* Q101 Qualified and PPAP Capable MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Symbol Value Drain
* to
* Source Voltage Gate
* to
* Source Voltage
* Continuous Continuous Drain

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