NVBG022N120M3S - SiC MOSFET
NVBG022N120M3S Features
* Typ. RDS(on) = 22 mW @ VGS = 18 V
* Ultra Low Gate Charge (QG(tot) = 142 nC)
* High Speed Switching with Low Capacitance (Coss = 146 pF)
* 100% Avalanche Tested
* AEC
* Q101 Qualified and PPAP Capable
* These Devices are RoHS Compliant Typical
