NVBG040N120SC1 Datasheet - ON Semiconductor

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NVBG040N120SC1 N-Channel MOSFET

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET * 40 mohm, 1200 V, M1, D2PAK-7L NVBG040N120SC1 V(BR)DSS 1200 V RDS(ON) MAX 56 mW @ 2.

NVBG040N120SC1-ONSemiconductor.pdf

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Datasheet Details

Part number:

NVBG040N120SC1

Manufacturer:

ON Semiconductor ↗

File Size:

328.27 KB

Description:

N-Channel MOSFET

Features

* Typ. RDS(on) = 40 mW
* Ultra Low Gate Charge (Typ. QG(tot) = 106 nC)
* Low Effective Output Capacitance (Typ. Coss = 139 pF)
* 100% Avalanche Tested
* AEC
* Q101 Qualified and PPAP Capable
* This Device is Halide Free and RoHS Compliant with ex

Applications

* Automotive On Board Charger
* Automotive DC-DC Converter for EV/HEV MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage VDSS 1200 V Gate
* to
* Source Voltage VGS +25/
* 15 V Recommended

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