NVBG020N120SC1 Datasheet - ON Semiconductor

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NVBG020N120SC1 SiC MOSFET

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET * 20 mohm, 1200 V, M1, D2PAK-7L NVBG020N120SC1 .

NVBG020N120SC1-ONSemiconductor.pdf

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Datasheet Details

Part number:

NVBG020N120SC1

Manufacturer:

ON Semiconductor ↗

File Size:

343.38 KB

Description:

SiC MOSFET

Features

* Typ. RDS(on) = 20 mW
* Ultra Low Gate Charge (typ. QG(tot) = 220 nC)
* Low Effective Output Capacitance (typ. Coss = 258 pF)
* 100% Avalanche Tested
* AEC
* Q101 Qualified and PPAP Capable
* This Device is Halide Free and RoHS Compliant with ex

Applications

* Automotive On Board Charger
* Automotive DC
* DC Converter for EV/HEV MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage Gate
* to
* Source Voltage Recommended Operation Values of Gate

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