NVBG020N120SC1 - SiC MOSFET
NVBG020N120SC1 Features
* Typ. RDS(on) = 20 mW
* Ultra Low Gate Charge (typ. QG(tot) = 220 nC)
* Low Effective Output Capacitance (typ. Coss = 258 pF)
* 100% Avalanche Tested
* AEC
* Q101 Qualified and PPAP Capable
* This Device is Halide Free and RoHS Compliant with ex
