NVBG040N120M3S Datasheet - ON Semiconductor

NVBG040N120M3S SiC MOSFET

NVBG040N120M3S Features

* Typ. RDS(on) = 40 mW @ VGS = 18 V

* Ultra Low Gate Charge (QG(tot) = 75 nC)

* High Speed Switching with Low Capacitance (Coss = 80 pF)

* 100% Avalanche Tested

* AEC

* Q101 Qualified and PPAP Capable

* This Device is Halide Free and RoHS Complia

Datasheet Details

NVBG040N120M3S

226.18 KB

Sic mosfet.

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NVBG040N120M3S SiC MOSFET ON Semiconductor

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