NVBG040N120M3S - SiC MOSFET
NVBG040N120M3S Features
* Typ. RDS(on) = 40 mW @ VGS = 18 V
* Ultra Low Gate Charge (QG(tot) = 75 nC)
* High Speed Switching with Low Capacitance (Coss = 80 pF)
* 100% Avalanche Tested
* AEC
* Q101 Qualified and PPAP Capable
* This Device is Halide Free and RoHS Complia
