NVBG025N065SC1 SiC MOSFET

ON Semiconductor

Description

Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, D2PAK-7L NVBG025N065SC1 .

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Datasheet Specifications

Part number: NVBG025N065SC1
Manufacturer: ON Semiconductor ↗
File Size: 217.16 KB
Datasheet: NVBG025N065SC1-ONSemiconductor.pdf
Description: SiC MOSFET

Features

* Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW @ VGS = 15 V
* Ultra Low Gate Charge (QG(tot) = 164 nC)
* Low Output Capacitance (Coss = 278 pF)
* 100% Avalanche Tested
* AEC
* Q101 Qualified and PPAP Capable
* RoHS Compliant Typical App

Applications

* Automotive On Board Charger
* Automotive DC/DC Converter for EV/HEV MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage Gate
* to
* Source Voltage Recommended Operation Values of Gate
* Sourc

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