NVBG020N090SC1 - N-Channel MOSFET
NVBG020N090SC1 Features
* Typ. RDS(on) = 20 mW @ VGS = 15 V
* Typ. RDS(on) = 16 mW @ VGS = 18 V
* Ultra Low Gate Charge (typ. QG(tot) = 200 nC)
* Low Effective Output Capacitance (typ. Coss = 295 pF)
* 100% Avalanche Tested
* AEC
* Q101 Qualified and PPAP Capable
