NVBG020N090SC1 N-Channel MOSFET

ON Semiconductor

Description

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET * 20 mohm, 900 V, M2, D2PAK-7L NVBG020N090SC1 .

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Datasheet Specifications

Part number: NVBG020N090SC1
Manufacturer: ON Semiconductor ↗
File Size: 320.55 KB
Datasheet: NVBG020N090SC1-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Typ. RDS(on) = 20 mW @ VGS = 15 V
* Typ. RDS(on) = 16 mW @ VGS = 18 V
* Ultra Low Gate Charge (typ. QG(tot) = 200 nC)
* Low Effective Output Capacitance (typ. Coss = 295 pF)
* 100% Avalanche Tested
* AEC
* Q101 Qualified and PPAP Capable

Applications

* Automotive On Board Charger
* Automotive DC-DC Converter for EV/HEV MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage VDSS 900 V Gate
* to
* Source Voltage VGS +22/
* 8 V Recommended Op

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NVBG020N090SC1 N-Channel MOSFET ON Semiconductor

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