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NVHL020N090SC1 N-Channel MOSFET

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Description

MOSFET * SiC Power, Single N-Channel, TO247-3L 900 V, 20 mW, 118 A NVHL020N090SC1 .

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Features

* Typ. RDS(on) = 20 mW
* Ultra Low Gate Charge (typ. QG(tot) = 196 nC)
* Low Effective Output Capacitance (typ. Coss = 296 pF)
* 100% UIL Tested
* Qualified According to AEC
* Q101

Applications

* Automotive On Board Charger
* Automotive DC/DC Converter for EV/HEV MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage Gate
* to
* Source Voltage Recommended Operation Values of Gate
* Sour

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