NVHL080N120SC1 N-Channel Silicon Carbide MOSFET

ON Semiconductor

Description

Silicon Carbide (SiC) MOSFET * 80 mohm, 1200 V, M1, TO-247-3L NVHL080N120SC1 .

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Datasheet Specifications

Part number: NVHL080N120SC1
Manufacturer: ON Semiconductor ↗
File Size: 358.16 KB
Datasheet: NVHL080N120SC1-ONSemiconductor.pdf
Description: N-Channel Silicon Carbide MOSFET

Features

* Typ. RDS(on) = 80 mW
* Ultra Low Gate Charge (typ. QG(tot) = 56 nC)
* Low Effective Output Capacitance (typ. Coss = 80 pF)
* 100% UIL Tested
* AEC
* Q101 Qualified and PPAP Capable
* This Device is Halide Free and RoHS Compliant with exemption

Applications

* Automotive On Board Charger
* Automotive DC
* DC converter for EV/HEV MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage Gate
* to
* Source Voltage Recommended Operation Values of Gate

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NVHL080N120SC1 N-Channel Silicon Carbide MOSFET ON Semiconductor

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