SBE812 - Schottky Barrier Diode

ON Semiconductor

Datasheet Details

Small switching noise.
Low leakage current and high reliability due to highly reliable planar structure.
Ultrasmall package allows applied sets to be made small and thin Speciﬁcations Absolute Maximum Ratings at Ta=25°C (Value per element) Parameter Symbol Conditions Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature VRRM VRSM IO IFSM Tj 50Hz sine wave, 1 cycle Storage Tem.

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Published: Jan 22, 2016 |