SBE817 - Rectifier

Sanyo Semicon Device

Datasheet Details

Composite type with 2 low IR SBDs in one package, facilitating high density mounting. Small switching noise. Low forward voltage (IF=2.0A, VF max=0.57V). Low reverse current (VR=7.5V, IR max=6μA). Ultrasmall package permitting applied sets to be small and slim (Mounting height 0.75mm). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surg.

📁 SBE817 Similar Datasheet

SBE807 - Schottky Barrier Diode (ON Semiconductor)
SBE808 - Schottky Barrier Diode (ON Semiconductor)
SBE809 - 30V 70mA Rectifier (Sanyo Semiconductor)
SBE002 - Schottky Barrier Diode (ON Semiconductor)
SBESD15C-C - Bi-Direction ESD Protection Diode (SeCoS)
SBESD24C-C - Bi-Direction ESD Protection Diode (SeCoS)
SBESD5301N - Ultra Low Capacitance ESD Protection (SeCoS Halbleitertechnologie)
SBESD5411N - Bi-directional Transient Voltage Suppressors (SeCoS)

Other Datasheets by Sanyo Semicon Device

Published: Jan 9, 2012 |