SBE812 - Rectifier

Sanyo Semicon Device

Datasheet Details

Small switching noise. Low leakage current and high reliability due to highly reliable planar structure. Ultrasmall package allows applied sets to be made small and thin. Specifications Absolute Maximum Ratings at Ta=25°C (Value per element) Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle.

📁 SBE812 Similar Datasheet

SBE807 - Schottky Barrier Diode (ON Semiconductor)
SBE808 - Schottky Barrier Diode (ON Semiconductor)
SBE809 - 30V 70mA Rectifier (Sanyo Semiconductor)
SBE002 - Schottky Barrier Diode (ON Semiconductor)
SBESD15C-C - Bi-Direction ESD Protection Diode (SeCoS)
SBESD24C-C - Bi-Direction ESD Protection Diode (SeCoS)
SBESD5301N - Ultra Low Capacitance ESD Protection (SeCoS Halbleitertechnologie)
SBESD5411N - Bi-directional Transient Voltage Suppressors (SeCoS)

Other Datasheets by Sanyo Semicon Device

Published: Jan 9, 2012 |