SZESD5Z2.5T1G Datasheet - ON Semiconductor

SZESD5Z2.5T1G ESD Protection Diode

of survivability specs. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current .

DATA SHEET www.onsemi.com ESD Protection Diode Micro Packaged Diodes for ESD Protection ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series The ESD5Z Series is designed to protect voltage sensitive components from ESD and transient voltage events. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its small size, it is suited for use in cellular phones, portable devices, digital cam.

SZESD5Z2.5T1G Features

* Low Clamping Voltage

* Small Body Outline Dimensions: 0.047

* x 0.032

* (1.20 mm x 0.80 mm)

* Low Body Height: 0.028

* (0.7 mm)

* Stand

* off Voltage: 2.5 V

* 12 V

* Peak Power up to 240 Watts @ 8 x 20 ms Pulse

* Low Leakage