MGS05N60D Datasheet - ON

MGS05N60D Insulated Gate Bipolar Transistor

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGS05N60D/D Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This IGBT contains a built in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in efficient operation at higher frequencies. This device is ideally suited for high frequency electronic ballasts. Built In Free Wheeling Diodes Built In Gate Protection Zene.

MGS05N60D Features

* cation in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries

MGS05N60D Datasheet (138.74 KB)