MGS13002D Datasheet - ON

MGS13002D Insulated Gate Bipolar Transistor

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGS13002D/D Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This IGBT contains a built in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in efficient operation at higher frequencies. This device is ideally suited for high frequency electronic ballasts. Built In Free Wheeling Diodes Built In Gate Protection Zene.

MGS13002D Features

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MGS13002D Datasheet (138.70 KB)