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MJW21196 - Silicon Power Transistors

MJW21196 Description

MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed.

MJW21196 Features

* Total Harmonic Distortion Characterized
* High DC Current Gain
* hFE = 20 Min @ IC = 8 Adc
* Excellent Gain Linearity
* High SOA: 2.25 A, 80 V, 1 Second
* Pb
* Free Packages are Available
* MAXIMUM RATINGS Rating Collector
* Emitter

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Datasheet Details

Part number
MJW21196
Manufacturer
ON
File Size
157.67 KB
Datasheet
MJW21196_ONSemiconductor.pdf
Description
Silicon Power Transistors

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Silicon Power Transistors ON
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