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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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General Purpose Transistors
NPN Bipolar Junction Transistor
(Complementary PNP Device: MMBT2131T1/T3)
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance — Junction to Ambient (1) Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance — Junction to Ambient (2) Operating and Storage Temperature Range Symbol VCEO VCBO VEBO IC IB PD PD RqJA PD PD RqJA TJ, Tstg Value 30 40 5.
MMBT2132T1 Datasheet
