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MMBT2369LT1, MMBT2369ALT1
MMBT2369ALT1 is a Preferred Device
Switching Transistors
NPN Silicon
Features http://onsemi.com
COLLECTOR 3
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCEO VCES VCBO VEBO IC Value 15 40 40 4.5 200 Unit Vdc Vdc Vdc Vdc mAdc 1 2 1 BASE
2 EMITTER
3 SOT−23 CASE 318 STYLE 6
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD 225 1.
MMBT2369ALT1 Datasheet
