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MMBT2369A - NPN GENERAL PURPOSE SWITCHING TRANSISTOR

Key Features

  • NPN epitaxial silicon, planar design.
  • Collector-emitter voltage VCE = 15V.
  • Collector current IC = 200mA.
  • In compliance with EU RoHS 2002/95/EC directives.

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MMBT2369A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 15 Volts POWER 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 15V • Collector current IC = 200mA • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOT-23, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.008 gram • Marking: M3B ABSOLUTE RATINGS PARAMETER Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous THERMAL CHARACTERISTICS PARAMETER Max Power Dissipation (Note 1) Thermal Resistance , Junction to Ambient Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC Symbol PTOT RθJA TJ TISTG Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. STAD-FEB.