Galaxy Century Microelectronics MMBT2369A
NPN General Purpose Amplifier
FEATURES
z Epitaxial planar die construction. z Ultra-small surface mount package. Pb Lead-freeAPPLICATIONS
z Use as a medium power amplifier. Production specification MMBT2369A ORDERING INFORMATION Type No. Marking MMBT2369A 1JA SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC RθJA Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Thermal resistance,junction to ambient Junction and Storage Temperature 40 15 4.5 200 300 417 -55 to +150 Unit V V V mA mW ℃/W ℃ C115 Rev.A 1 Production specification NPN General Purpose Amplifier MMBT2369AELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX Collector-base breakdown voltage V(BR)CBO IC=10μA IE=0 40 Collector-emitter breakdown voltage V(BR)CEO IC=1