PANJIT International MMBT2369A
NPN GENERAL PURPOSE SWITCHING TRANSISTOR
FEATURES
● NPN epitaxial silicon, planar design● Collector-emitter voltage VCE = 15V
● Collector current IC = 200mA
● In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
● Case: SOT-23, Plastic● Terminals: Solderable per MIL-STD-750, Method 2026
● Approx. Weight: 0.008 gram
● Marking: M3B ABSOLUTE RATINGS PARAMETER Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous THERMAL CHARACTERISTICS PARAMETER Max Power Dissipation (Note 1) Thermal Resistance , Junction to Ambient Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC Symbol PTOT RθJA TJ TISTG Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. STAD-FEB.08.2007 Value 15 40 4.5 200 Value 225 556 -55 to 150 -55 to 150 Units V V V mA Units mW O C/W OC OC PAGE . 1 MMBT2369A
ELECTRICAL CHARACTERISTICS
PA RA ME TE R OF F C HA RA C TE RI