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MMBT2369ALT1 - Switching Transistors

Key Features

  • be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress.
  • Mechanical stress or shock should not be applied during cooling.
  • Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. The values for the equation are found in the maximum ratings table on the data sh.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT2369LT1/D Switching Transistors NPN Silicon 1 BASE COLLECTOR 3 MMBT2369LT1 MMBT2369ALT1* *Motorola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCES VCBO VEBO IC Value 15 40 40 4.