2SC6094 - Bipolar Transistor

ON Semiconductor

Datasheet Details

Adoption of FBET, MBIT process.
Low collector-to-emitter saturation voltage.
High allowable power dissipation.
Large current capacity.
High-speed switching Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCES VCEO VEBO IC ICP Package Dimensions unit : mm (typ) 7007B-004 Top View 4.5 1.6 2SC6094-T.

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Published: Apr 1, 2016 |