* Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Co
2SC6095
Sanyo Semicon Device
65.43 KB
Npn epitaxial planar silicon transistor.
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Ordering number : ENA0411
2SC6095
2SC6095
Applications
*
NPN Epitaxial Planar Silicon Transistor
High-Voltage Switchi.
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