* Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE range. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Colle
2SC6013
Sanyo Semicon Device
207.77 KB
Npn epitaxial planar silicon transistor.
www.DataSheet4U.com Ordering number : EN8556 2SC6013 2SC6013 Applications NPN Epitaxial Planar Silicon Transistor DC / DC Converter Appl.
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