2SC6000 Datasheet - Toshiba Semiconductor

2SC6000 Silicon NPN Transistor

2SC6000 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6000 High Speed Switching Applications DC-DC Converter Applications High DC current gain: hFE = 250 to 400 (IC = 2.5 A) Low collector-emitter saturation: VCE (sat) = 0.18 V (max) High speed switching: tf = 13 ns (typ) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Coll.

2SC6000_ToshibaSemiconductor.pdf