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2SC6011 - NPN Transistor

Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) Good Linearity of hFE Complement to Type 2SA2151 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC6011 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·Good Linearity of hFE ·Complement to Type 2SA2151 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 160 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.
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