2SC6011 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC6011 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min). Good Linearity of hFE. Complement to Type 2SA2151. 100% avalanche te.

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Datasheet Specifications

Part number: 2SC6011
Manufacturer: INCHANGE
File Size: 178.62 KB
Datasheet: 2SC6011-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A IB Base Current-Conti

2SC6011 Distributors

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2SC6011 NPN Transistor INCHANGE

INCHANGE 2SC6011-like datasheet