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2SC6011 NPN Transistor

2SC6011 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC6011 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min). Good Linearity of hFE. Complement to Type 2SA2151. 100% avalanche te.

2SC6011 Applications

* Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A IB Base Current-Conti

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Datasheet Details

Part number
2SC6011
Manufacturer
INCHANGE
File Size
178.62 KB
Datasheet
2SC6011-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SC6011-like datasheet