2SC6011 Datasheet - INCHANGE

2SC6011, NPN Transistor

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC6011 DESCRIPTION *High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min)

Applications

* Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A IB Base Current-Conti

2SC6011-INCHANGE.pdf