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2SC6145 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC6145.

General Description

·High frequency multi emitter transistor ·Small package(TO-3P) ·High power handling capacity ,160W ·Complement to Type 2SA2223 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.

APPLICATIONS ·Signal transistors for audio amplifiers ·Audio market ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4.0 A 160 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website: www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC6145 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=5A;

2SC6145 Distributor