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2SC6145A - Silicon NPN Power Transistor

General Description

High frequency multi emitter transistor Small package(TO-3P) High power handling capacity ,160W Complement to Type 2SA2223A

and reliable operation.

Signal transistors for audio amplifiers Aud

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC6145A DESCRIPTION ·High frequency multi emitter transistor ·Small package(TO-3P) ·High power handling capacity ,160W ·Complement to Type 2SA2223A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Signal transistors for audio amplifiers ·Audio market ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 260 V VCEO Collector-Emitter Voltage 260 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4.0 A 160 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.