Datasheet4U Logo Datasheet4U.com

2SC6011A - NPN Transistor

General Description

High Power Handling capacity High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) Complement to Type 2SA2151A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC6011A PNP PowerTransistor Sanken
2SC6011A Audio Amplification Transistor Allegro MicroSystems
2SC6011 Audio Amplification Transistor Allegro MicroSystems
2SC6011 Audio Amplification Transistor Sanken
2SC6010 Silicon NPN Transistor Toshiba

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC6011 NPN Transistor
2SC6076 NPN Transistor
2SC6082 TO-220F NPN Transistor
2SC6082 TO-252 NPN Transistor
2SC6082 TO-263 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·High Power Handling capacity ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) ·Complement to Type 2SA2151A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 160 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC6011A isc website：www.