2SC6011A Datasheet and Specifications PDF

The 2SC6011A is a NPN Transistor.

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Part Number2SC6011A Datasheet
ManufacturerInchange Semiconductor
Overview ·High Power Handling capacity ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) ·Complement to Type 2SA2151A ·Minimum Lot-to-Lot variations for robust device performance and reliable op. Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICBO Collector Cutoff Current VCB= 230V ; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE-1 DC Current Gain IC= 3A ; VCE= 4V
* hFE-1 Classifications O 50-100 P 70-140 Y 90-180 2SC60.
Part Number2SC6011A Datasheet
DescriptionPNP PowerTransistor
ManufacturerSanken
Overview 2SC6011/ 2SC6011A 2SC6011 2SC6011A 2SC60111 2SC6011A DataSheet4U.com DataShee 3.2 6.0 2.0 1.8 19.9 3.5 2 3 20.0 2˚ 2˚ 1.7 0.6 1.0 5.45 5.45 15.8 DataSheet4U.com . .
Part Number2SC6011A Datasheet
DescriptionAudio Amplification Transistor
ManufacturerAllegro MicroSystems
Overview By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high po. and Benefits ▪ ▪ ▪ ▪ Small package (TO-3P) High power handling capacity, 160 W Improved sound output by reduced on-chip impedance For professional audio (PA) applications, VCEO = 230 V versions available ▪ Complementary to 2SA2151A ▪ Recommended output driver: 2SC4382A Description By adapting the S.