2SC6076
Overview
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)=0.5V(Max) @IC= 1A Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part | 2SC6076 |
|---|---|
| Description | NPN Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 208.07 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SC6076 | Toshiba | Silicon NPN Transistor |
| 2SC6071 | SANYO | NPN Epitaxial Planar Silicon Transistor |
| 2SC6077 | Toshiba | Silicon NPN Transistor |
| 2SC6079 | Toshiba | Silicon NPN Transistor |
| 2SC607 | Unknown Manufacturer | PNP/NPN SILICON TRANSISTOR |