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2SC6079
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6079
Power Amplifier Applications Power Switching Applications
Low collector saturation voltage: VCE (sat) = 0.5 V (max)（IC = 1A） High-speed switching: tstg = 0.4 μs (typ)
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Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEX VCEO VEBO IC ICP IB PC Tj Tstg Rating 160 160 80 9 2.0 4.0 1.5 1 150 −55～150 Unit V V V V A A A W °C °C 1 : BASE 2 : COLLECTOR 3 : EMITTER
JEDEC JEITA TOSHIBA Weight:0.2g(typ)
― ― 2-7D101A
Note: Using continuously under heavy loads (e.g.
2SC6079 Datasheet
