2SC6078 Datasheet | Toshiba

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) ○ Power Amplifier Applications ○ Power Switching Applications - - Low collector saturation voltage: VCE (sat) = 0.5 V (max)（IC = 1A） High-speed switching: tstg = 0.4 μs (typ) Unit: mm .. Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol VCBO VCEX VCEO VEBO DC Pulse IC ICP IB PC Tj Tstg Rating 160 160 80 7 3 5 1.0 1.8 150 - 55～150 Unit V V V V A A A W °C °C 1 : BASE 2 : COLLECTOR（HEAT SINK） 3 : EMITTER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range JEDEC JEITA TOSHIBA － － 2-10T1A Weight:1.5g(typ) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2006-11-16 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO h FE (1) DC current gain h FE (2) h FE (3) Collector emitter saturation voltage VCE (sat) (1) VCE (sat) (2) VBE (sat) f T Cob tr IB1 Test Conditions VCB = 160 V, IE = 0 VEB = 7 V, IC = 0 IC = 10 m A, IB = 0 VCE = 2 V, IC = 1 m A VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 1 A IC = 0.5 A, IB = 50 m A IC = 1 A, IB = 100 m A IC = 1 A, IB = 100 m A VCE = 2 V, IC = 0.5 A VCB = 10 V, IE = 0,f = 1MHZ 20 μs IB1 IB2 Output 24 Ω Min － － 80 80 100 60 － － － － － － Typ. － － － － － － － － － 150 14 0.05 Max 1.0 1.0...