2SC6075 Datasheet | Toshiba

TOSHIBA Transistor Silicon NPN Epitaxial Type Power Amplifier Applications Power Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max)（IC = 1A） High-speed switching: tstg = 0.4 μs (typ) .. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEX VCEO VEBO IC ICP IB PC Tj Tstg Rating 160 160 80 9 2.5 5.0 1.0 1.3 150 - 55～150 Unit V V V V A A A W °C °C 1 : EMITTER 2 : COLLECTOR 3 : BASE JEDEC JEITA TOSHIBA Weight:0.55g(typ) ― ― 2-8M1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2007-06-07 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO h FE (1) DC current gain h FE (2) h FE (3) Collector emitter saturation voltage VCE (sat) (1) VCE (sat) (2) VBE (sat) f T Cob tr IB1 Test Conditions VCB = 160 V, IE = 0 VEB = 9 V, IC = 0 IC = 10 m A, IB = 0 VCE = 2 V, IC = 1 m A VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 1 A IC = 0.5 A, IB = 50 m A IC = 1 A, IB = 100 m A IC = 1 A, IB = 100 m A VCE = 2 V, IC = 0.5 A VCB = 10 V, IE = 0,f = 1MHZ 20 μs IB1 IB2 Output 24 Ω Min ― ― 80 150 180 100 ― ― ― ― ― ― Typ. ― ― ― ― ― ― ― ― ― 150 14 0.05 Max 1 1 ― ― 450 ― 0.3 0.5 1.5 ―...