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2SC6076 - Silicon NPN Transistor

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Part number 2SC6076
Manufacturer Toshiba Semiconductor
File Size 197.52 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SC6076 Datasheet
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6076 Power Amplifier Applications Power Switching Applications 2SC6076 Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) ( IC = 1A) High-speed switching: tstg = 0.4 μs (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Tc = 25℃ VCBO VCEX VCEO VEBO IC ICP IB PC Tj Tstg 160 V 160 V 80 V 9 V 3 A 5 A 1.5 A 10 W 150 °C −55 to 150 °C 1 : BASE 2 : COLLECTOR（HEAT SINK） 3 : EMITTER JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight:0.36g (typ.
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