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2SC6072 - Multi-chip Device Silicon NPN Transistor

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Datasheet Details

Part number 2SC6072
Manufacturer Toshiba
File Size 204.25 KB
Description Multi-chip Device Silicon NPN Transistor
Datasheet download datasheet 2SC6072 Datasheet

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2SC6072 TOSHIBA Multi-chip Device Silicon NPN Epitaxial Transistor Type 2SC6072 Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm High transition frequency: fT = 200 MHz (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 180 180 5 2.0 1.0 2.0 20 150 − 55~150 Unit V V V A A W W °C °C 1: BASE 2: COLLECTOR 3: EMITTER JEDEC JEITA TOSHIBA Weight: 1.7 g (typ.) ― SC-67 2-10U1A Note1: Using continuously under heavy loads (e.g.